K4A4G165WD-BCTD vs H5AN4G6NBJR-UHC 对比
详细并排对比 K4A4G165WD-BCTD 出自 Samsung Electronics 和 H5AN4G6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G165WD-BCTD | H5AN4G6NBJR-UHC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $19.00 | $8.09 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| Core Supply (VPP) | 2.5 V | — |
| 接口 | SSTL-12 | — |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| 封装 | 96-ball FBGA | FBGA-96 (PBGA-96) |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 工作温度 | 0C to +85C (commercial) | -40C to +95C |
| On-Die Termination | Dynamic ODT | Dynamic ODT |
| ZQ Calibration | Yes (external RZQ resistor) | Yes |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| 存储容量 | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Technology | — | CMOS |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |