K4A4G165WF-BCTD vs K4A4G165WD-BCPB Comparison
Detailed side-by-side comparison of K4A4G165WF-BCTD by Samsung Electronics and K4A4G165WD-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G165WF-BCTD | K4A4G165WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.20 | $3.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| Interface | SSTL-12 | DDR4 (synchronous, source-synchronous strobe) |
| Package | FBGA-96 (PBGA96) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | Self-refresh supported (TCSR per DDR4 standard features) |
| RoHS Status | Compliant | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| Data Rate | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| CAS Latency | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |