K4A4G165WF-BCTD vs K4A4G165WD-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WF-BCTD sa pamamagitan ng Samsung Electronics at K4A4G165WD-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G165WF-BCTD | K4A4G165WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $8.20 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| Interface | SSTL-12 | DDR4 (synchronous, source-synchronous strobe) |
| Packhaging | FBGA-96 (PBGA96) | FBGA-96 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Mga Karakteristika | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | Self-refresh supported (TCSR per DDR4 standard features) |
| Tindminan RoHS | Compliant | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| Rate ng Data | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |