K4A4G165WF-BCTD vs K4A4G165WD-BCPB 比較
詳細並排比較 K4A4G165WF-BCTD 由 Samsung Electronics 與 K4A4G165WD-BCPB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G165WF-BCTD | K4A4G165WD-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $8.20 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| 介面 | SSTL-12 | DDR4 (synchronous, source-synchronous strobe) |
| 封裝 | FBGA-96 (PBGA96) | FBGA-96 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| 功能特色 | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | Self-refresh supported (TCSR per DDR4 standard features) |
| RoHS 狀態 | Compliant | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| 資料速率 | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |