K4A4G165WF-BCTD vs K4A4G165WD-BCPB Perbandingan
Perbandingan bersamaan detil K4A4G165WF-BCTD dari Samsung Electronics dan K4A4G165WD-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WF-BCTD | K4A4G165WD-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $8,20 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| Antarmuka | SSTL-12 | DDR4 (synchronous, source-synchronous strobe) |
| Paket | FBGA-96 (PBGA96) | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | Self-refresh supported (TCSR per DDR4 standard features) |
| Status RoHS | Compliant | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| Laju Data | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |