K4A8G045WB vs K4A8G165WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G045WB by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB ✓ Active
Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC ✓ Active

Specification Comparison

Parameter K4A8G045WB K4A8G165WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.27 $12.57
Memory Type DDR4 SDRAM (B-die) DDR4 SDRAM (DRAM, volatile)
Density 8 Gb —
Organization 2G x 4 —
Data Rate 2133 Mbps 2400 Mbps (PC4-19200)
Supply Voltage 1.2 V 1.2 V (1.14 V to 1.26 V)
Max Supply Current 211.7 mA —
Operating Temperature 0 C to +85 C -40C to +95C
Package 78-ball FBGA 96-ball FBGA (PBGA96)
Refresh Cycles 8192 —
Mounting Type Surface Mount Surface Mount
Number of Terminals 78 —
Clocking Differential clock (CK / CK#) —
On-Die Termination Yes (ODT pin) Yes (ODT with dynamic ODT)
Asynchronous Reset Yes Yes
Posted CAS Yes —
Programmable CWL Yes —
Internal (Self) Calibration Yes —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Memory Size — 8 Gb (1 GB)
Memory Organization — 512M x 16
Technology — CMOS DRAM, Samsung 8Gb B-die
Ball Pitch — 0.8 mm
Interface — DDR4 (Double Data Rate, synchronous)
ZQ Calibration — Yes
CRC / CA Parity — Yes (CRC function)
Auto Precharge — Yes
Refresh — Auto-refresh and self-refresh

Datasheets & Resources

Browse All Products Create BOM Request Quote