K4A8G085WB-BCRC vs K4A8G085WB-BICH Comparison
Detailed side-by-side comparison of K4A8G085WB-BCRC by Samsung Electronics and K4A8G085WB-BICH by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCRC | K4A8G085WB-BICH |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2400 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage | 1.2 V | 1.2V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C |
| Package | 78-ball FBGA | 78-ball FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | BL8, BL16 |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Max Supply Current | — | 170mA |
| CAS Latency | — | Programmable |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| Lead-Free | — | Yes |
| Die Revision | — | B-die |