K4A8G085WB-BICH vs K4A8G085WB-BIRC Comparison
Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G085WB-BIRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BICH
K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
K4A8G085WB-BICH β ActiveSamsung Electronics
K4A8G085WB-BIRC
K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G085WB-BIRC β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BICH | K4A8G085WB-BIRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.96 | $4.15 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | 1.2 V |
| Data Rate | 2400 Mbps (DDR4-2400) | 2400 Mbps |
| Package | 78-ball FBGA | 78-FBGA |
| Operating Temperature | 0Β°C to 85Β°C | -40Β°C to 95Β°C |
| Max Supply Current | 170mA | β |
| Burst Length | BL8, BL16 | 8, 16 |
| CAS Latency | Programmable | [DATA_NEEDED: CAS Latency] |
| On-Die ECC | Yes | β |
| Data Bus Inversion | Yes | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Die Revision | B-die | β |
| Number of Terminals | β | 78 |
| Refresh Cycles | β | 8192 |
| Die Family | β | B-die |
| Interface | β | SSTL-12 |
| Mounting Type | β | Surface Mount |