K4A8G085WB-BITD vs K4A8G085WB-BICH Comparison
Detailed side-by-side comparison of K4A8G085WB-BITD by Samsung Electronics and K4A8G085WB-BICH by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BITD
K4A8G085WB-BITD - 8Gb DDR4 SDRAM 2666Mbps | Samsung
K4A8G085WB-BITD β ActiveSamsung Electronics
K4A8G085WB-BICH
K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
K4A8G085WB-BICH β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BITD | K4A8G085WB-BICH |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.80 | $4.96 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage | 1.2 V | 1.2V |
| Operating Temperature | -40Β°C to +95Β°C | 0Β°C to 85Β°C |
| Package | 78FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | β |
| Number of Pins | 78 | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | Programmable |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | β |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | β |
| Interface | Parallel | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | Yes |
| Max Supply Current | β | 170mA |
| Burst Length | β | BL8, BL16 |
| On-Die ECC | β | Yes |
| Data Bus Inversion | β | Yes |
| RoHS | β | Compliant |
| Die Revision | β | B-die |