K4A8G085WC-BCRC vs H5AN8G8NCJR-RDC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCRC by Samsung Electronics and H5AN8G8NCJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCRC | H5AN8G8NCJR-RDC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.30 | $2.70 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb (1 GB) |
| Organization | 1G x 8 | x8 |
| Supply Voltage | 1.2 V | 1.2 V (VDD) |
| Data Rate | 2400 Mbps (DDR4-2400) | up to 2666 Mbps |
| Package | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS Status | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| Interface | — | DDR4 (JEDEC standard) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| CAS Latency | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Halogen Free | — | Yes |