K4A8G085WC-BCRC vs H5AN8G8NCJR-RDC 对比
详细并排对比 K4A8G085WC-BCRC 出自 Samsung Electronics 和 H5AN8G8NCJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WC-BCRC | H5AN8G8NCJR-RDC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.30 | $2.70 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb (1 GB) |
| 存储组织 | 1G x 8 | x8 |
| 电源电压 | 1.2 V | 1.2 V (VDD) |
| 数据速率 | 2400 Mbps (DDR4-2400) | up to 2666 Mbps |
| 封装 | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +95C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| 接口 | — | DDR4 (JEDEC standard) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| 无卤 | — | Yes |