K4A8G165WB-BCPB vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ ActiveSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCPB | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 2133 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature | 0C to +85C | -40C to +95C |
| Package | 96FBGA (TFBGA) | 96-ball FBGA (PBGA96) |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (synchronous, double data rate) | Parallel (DDR4 SDRAM bus) |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS Status | Compliant (per Lisleapex listing) | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |