K4A8G165WB-BCPB vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB β ActiveSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCPB | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $12.57 |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Speed Grade | 2133 Mbps (PC4-17000) | β |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V (1.14 V to 1.26 V) |
| Operating Temperature | 0Β°C to 85Β°C | -40C to +95C |
| Package | 96-ball FBGA (TFBGA-96) | 96-ball FBGA (PBGA96) |
| Burst Length | 8 (BL8) | β |
| Burst Type | Sequential and Interleave | β |
| CAS Latency | Programmable (e.g., 15, 16, 18) | β |
| Refresh | Auto and Self Refresh | Auto-refresh and self-refresh |
| Number of Terminals | 96 | β |
| Package Code | TFBGA | β |
| Package Shape | RECTANGULAR | β |
| Terminal Position | BOTTOM | β |
| RoHS Status | Compliant | Compliant |
| Memory Type | β | DDR4 SDRAM (DRAM, volatile) |
| Memory Size | β | 8 Gb (1 GB) |
| Memory Organization | β | 512M x 16 |
| Data Rate | β | 2400 Mbps (PC4-19200) |
| Technology | β | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | β | 0.8 mm |
| Mounting Type | β | Surface Mount |
| Interface | β | DDR4 (Double Data Rate, synchronous) |
| On-Die Termination | β | Yes (ODT with dynamic ODT) |
| ZQ Calibration | β | Yes |
| CRC / CA Parity | β | Yes (CRC function) |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |