K4A8G165WB-BCRC vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSamsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.57 | $6.55 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb (1 GB) | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps (PC4-19200) | 3200 Mbps |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Technology | CMOS DRAM, Samsung 8Gb B-die | β |
| Package | 96-ball FBGA (PBGA96) | 96FBGA |
| Ball Pitch | 0.8 mm | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +95C | 0C to +85C |
| Interface | DDR4 (Double Data Rate, synchronous) | Parallel |
| On-Die Termination | Yes (ODT with dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| CRC / CA Parity | Yes (CRC function) | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Refresh | Auto-refresh and self-refresh | β |
| RoHS Status | Compliant | Compliant |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Access Time (CAS Latency) | β | 19 ns |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| Lead Free | β | Yes |