K4A8G165WB-BCRC vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $6.25 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Interface | Parallel (DDR4 SDRAM bus) | Parallel |
| Supply Voltage (VDD) | 1.2 V | — |
| Data Rate | 2400 Mbps/pin (DDR4-2400) | 3200 Mbps/pin |
| Technology | CMOS, B-die 8Gb die | DDR4 SDRAM B-die |
| Package | 96-ball FBGA (PBGA96) | 96FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +95C | 0C to +85C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Supply Voltage | — | 1.2 V |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| RoHS Status | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |