K4A8G165WB-BCRC vs K4A8G165WB-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G165WB-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WB-BCRC | K4A8G165WB-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6.25 |
| Jenis Ingatan | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Antaramuka | Parallel (DDR4 SDRAM bus) | Parallel |
| Supply Voltage (VDD) | 1.2 V | — |
| Kadar Data | 2400 Mbps/pin (DDR4-2400) | 3200 Mbps/pin |
| Technology | CMOS, B-die 8Gb die | DDR4 SDRAM B-die |
| Kemasan | 96-ball FBGA (PBGA96) | 96FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +95C | 0C to +85C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| Status RoHS | — | [DATA_NEEDED: RoHS compliance statement] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |