K4A8G165WB-BCWE vs K4A8G165WC-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WC-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ ActiveSamsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $1.31 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps | DDR4-2133 (2133 Mbps/pin) |
| Supply Voltage | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | — |
| Interface | Parallel | DDR4 (16-bit data bus) |
| Package | 96FBGA | 96-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | 0C to +95C |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS Status | Compliant | Compliant |
| Lead Free | Yes | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Generation | — | C-die (1Y nm class) |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| MSL Level | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |