K4A8G165WB-BCWE vs K4A8G165WC-BCPB 对比
详细并排对比 K4A8G165WB-BCWE 出自 Samsung Electronics 和 K4A8G165WC-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCWE | K4A8G165WC-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.55 | $1.31 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 3200 Mbps | DDR4-2133 (2133 Mbps/pin) |
| 电源电压 | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | — |
| 接口 | Parallel | DDR4 (16-bit data bus) |
| 封装 | 96FBGA | 96-ball FBGA (TFBGA) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +85C | 0C to +95C |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS 状态 | Compliant | Compliant |
| Lead Free | Yes | — |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Generation | — | C-die (1Y nm class) |
| 特性 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |