K4A8G165WB-BIWE vs H5AN8G6NDJR-UHC Comparison
Detailed side-by-side comparison of K4A8G165WB-BIWE by Samsung Electronics and H5AN8G6NDJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WB-BIWE | H5AN8G6NDJR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | — |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | -40°C to +95°C | — |
| Package | 96-ball FBGA | FBGA-96 (13x7.5 mm) |
| Interface | Parallel | — |
| Burst Length | 8, 16 | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh | Auto-refresh, Self-refresh | — |
| On-Die Termination | Yes | — |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | — |
| Number of Pins | 96 | — |
| Speed Grade | — | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| JESD-30 Code | — | R-PBGA-B96 |
| Maximum Operating Temperature | — | 85 °C |
| Minimum Operating Temperature | — | 0 °C |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Additional Features | — | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |