K4A8G165WC-BCRC vs E3AD8G16A4-HR Comparison

Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electronics and E3AD8G16A4-HR by ELIXIR/NANYA. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G165WC-BCRC K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G165WC-BCRC ✓ Active
ELIXIR/NANYA
E3AD8G16A4-HR E3AD8G16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | ELIXIR/NANYA

E3AD8G16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | ELIXIR/NANYA

E3AD8G16A4-HR ✓ Active

Specification Comparison

Parameter K4A8G165WC-BCRC E3AD8G16A4-HR
Brand Samsung Electronics ELIXIR/NANYA
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $23.00 $8.60
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 512M x 16 512M x 16
Data Rate 2400 Mbps 3200 MT/s
Supply Voltage (VDD) 1.2 V (1.14V to 1.26V) —
VPP Voltage 2.5 V —
Operating Temperature 0°C to +95°C (case) 0C to +95C (TCASE)
Package 96-ball FBGA (9mm x 13mm) TFBGA-96
Interface 16-bit I/O —
Banks 16 (4 bank groups) —
Burst Length 8 (BL8) 8 (BC4 optional)
CAS Latency Programmable (e.g., 16, 17, 18) 22
Refresh Temperature-compensated self-refresh (TCSR) Auto-refresh and self-refresh
RoHS Compliant Compliant
Mounting Type Surface Mount Surface Mount
Supply Voltage — 1.2 V
Number of Banks — 16 (4 bank groups)
Lead-Free — Yes
Speed Grade — DDR4-3200

Datasheets & Resources

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