K4B4G1646D-BYH90 vs K4B4G1646D-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BYH90 by Samsung Electronics and K4B4G1646D-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYH90 | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps/pin | 1600 Mbps (PC3-12800) |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35 V (1.5 V compatible) |
| I/O Interface | x16 | — |
| Number of Banks | 8 | — |
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | 0°C to +85°C | 0°C to 85°C |
| CAS Latency | Programmable (e.g., 11, 12, 13) | Programmable (e.g., 11, 10, 9) |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (ODT pin) | Yes |
| ZQ Calibration | Yes (240-ohm resistor to ground) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | — | Yes |
| Number of Pins | — | 96 |
| Die Revision | — | D-die |