K4B4G1646D-BYH90 vs K4B4G1646D-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BYH90 disebabkan oleh Samsung Electronics dan K4B4G1646D-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646D-BYH90 | K4B4G1646D-BYK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasi | 512M x 16 | 256M x 16 |
| Kadar Data | 2133 Mbps/pin | 1600 Mbps (PC3-12800) |
| Tegangan Pemberi Arus | 1.35V (1.283V to 1.45V) | 1.35 V (1.5 V compatible) |
| I/O Interface | x16 | — |
| Number of Banks | 8 | — |
| Kemasan | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| Suhu Operasi | 0°C to +85°C | 0°C to 85°C |
| Latensi CAS | Programmable (e.g., 11, 12, 13) | Programmable (e.g., 11, 10, 9) |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (ODT pin) | Yes |
| ZQ Calibration | Yes (240-ohm resistor to ground) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| RoHS Compliant | — | Yes |
| Bilangan Pin | — | 96 |
| Die Revision | — | D-die |