K4B4G1646D-BYH90 vs K4B4G1646D-BYK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BYH90 sa pamamagitan ng Samsung Electronics at K4B4G1646D-BYK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BYH90 | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasyon | 512M x 16 | 256M x 16 |
| Rate ng Data | 2133 Mbps/pin | 1600 Mbps (PC3-12800) |
| Volte ng Pagbibigay | 1.35V (1.283V to 1.45V) | 1.35 V (1.5 V compatible) |
| I/O Interface | x16 | — |
| Number of Banks | 8 | — |
| Packhaging | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| Temperature na Operasyon | 0°C to +85°C | 0°C to 85°C |
| Latensya ng CAS | Programmable (e.g., 11, 12, 13) | Programmable (e.g., 11, 10, 9) |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (ODT pin) | Yes |
| ZQ Calibration | Yes (240-ohm resistor to ground) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | Yes |
| RoHS Compliant | — | Yes |
| Bilang ng Pins | — | 96 |
| Die Revision | — | D-die |