K4B4G1646D-BYK00 vs W634GU6RB09J Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK00 by Samsung Electronics and W634GU6RB09J by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BYK00 | W634GU6RB09J |
|---|---|---|
| Brand | Samsung Electronics | Winbond |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $8.10 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1066 MHz (DDR3L-2133) |
| Supply Voltage | 1.35 V (also operates at 1.5 V) | 1.35V |
| Package | 96-ball TFBGA | 96-VFBGA (7.5x13mm) |
| Number of Terminals | 96 | — |
| Operating Temperature | 0°C to 85°C | 0°C to +95°C (Tc) |
| CAS Latency | Programmable | 20 ns |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | Yes |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | Compliant |
| Burst Length | — | 8 and 4 |
| Number of Pins | — | 96 |
| Ball Pitch | — | 0.8 mm |