K4B4G1646D-BYK00 vs W634GU6RB09J 对比
详细并排对比 K4B4G1646D-BYK00 出自 Samsung Electronics 和 W634GU6RB09J 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 量产中
规格对比
| 参数 | K4B4G1646D-BYK00 | W634GU6RB09J |
|---|---|---|
| 品牌 | Samsung Electronics | Winbond |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $8.10 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 1600 Mbps | 1066 MHz (DDR3L-2133) |
| 电源电压 | 1.35 V (also operates at 1.5 V) | 1.35V |
| 封装 | 96-ball TFBGA | 96-VFBGA (7.5x13mm) |
| Number of Terminals | 96 | — |
| 工作温度 | 0°C to 85°C | 0°C to +95°C (Tc) |
| CAS 延迟 | Programmable | 20 ns |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | Yes |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| 存储容量 | — | 4Gbit (256M x 16) |
| 接口 | — | Parallel |
| 安装类型 | — | Surface Mount |
| RoHS 状态 | — | Compliant |
| Burst Length | — | 8 and 4 |
| 引脚数 | — | 96 |
| Ball Pitch | — | 0.8 mm |