K4B4G1646D-BYMA0 vs MT41K256M16TW-107 Comparison
Detailed side-by-side comparison of K4B4G1646D-BYMA0 by Samsung Electronics and MT41K256M16TW-107 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BYMA0 | MT41K256M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $14.10 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps (PC3-14900) | — |
| Package | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Operating Temperature Range | 0°C to +85°C | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Precharge | Supported | Yes |
| Asynchronous Reset | Supported | Yes |
| ZQ Calibration | Supported | Yes |
| Data Mask | Supported | Yes |
| Dynamic On-Chip Termination | Supported | — |
| Memory Size | — | 4 Gbit |
| Interface | — | Parallel |
| Clock Frequency | — | 933 MHz (DDR3L-1866) |
| Access Time | — | 20 ns |
| Data Bus Width | — | 16 bit |
| Mounting Type | — | Surface Mount |
| Operating Temperature | — | 0C to +95C (commercial :P grade) |
| Auto Self-Refresh | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |
| MSL Level | — | [DATA_NEEDED: MSL level] |