K4B4G1646E-BCNB vs K4B4G1646E-BYK0 比較
詳細並排比較 K4B4G1646E-BCNB 由 Samsung Electronics 與 K4B4G1646E-BYK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ 啟用中
規格比較
| 參數 | K4B4G1646E-BCNB | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $13.52 | — |
| 記憶體類型 | DDR3 SDRAM | DDR3L SDRAM |
| 記憶體容量 | 4 Gb | — |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) |
| 資料速率 | 1866 Mbps | DDR3-1600 (800 MHz) |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | 11 (CL-tRCD-tRP) |
| 工作溫度 | 0C to +95C | 0°C to +95°C (TC) |
| 封裝 | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| 安裝類型 | Surface Mount | — |
| RoHS 狀態 | Compliant | — |
| 腳位數 | 96 | — |
| 介面類型 | Parallel | — |
| Refresh | 8K / 64 ms | — |
| Burst Length | 8, 4 (fixed) | 8 (fixed), 4 (burst chop) |
| Write Recovery Time | [DATA_NEEDED: tWR] | — |
| Row Cycle Time | [DATA_NEEDED: tRC] | — |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | — |
| Row Precharge Time | [DATA_NEEDED: tRP] | — |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | — |
| Density | — | 4 Gb |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |