K4B4G1646E-BCNB vs K4B4G1646E-BYK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BCNB sa pamamagitan ng Samsung Electronics at K4B4G1646E-BYK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4B4G1646E-BCNB | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $13.52 | — |
| Uri ng Memory | DDR3 SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gb | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) |
| Rate ng Data | 1866 Mbps | DDR3-1600 (800 MHz) |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | 11 (CL-tRCD-tRP) |
| Temperature na Operasyon | 0C to +95C | 0°C to +95°C (TC) |
| Packhaging | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | — |
| Bilang ng Pins | 96 | — |
| Uri ng Interface | Parallel | — |
| Refresh | 8K / 64 ms | — |
| Burst Length | 8, 4 (fixed) | 8 (fixed), 4 (burst chop) |
| Write Recovery Time | [DATA_NEEDED: tWR] | — |
| Row Cycle Time | [DATA_NEEDED: tRC] | — |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | — |
| Row Precharge Time | [DATA_NEEDED: tRP] | — |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | — |
| Density | — | 4 Gb |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |