K4B4G1646E-BYMATCV vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMATCV by Samsung Electronics and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYMATCV
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV β Active
Specification Comparison
| Parameter | K4B4G1646E-BYMATCV | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | β |
| Data Rate | 1866 Mbps | 1866 Mbps/pin |
| Supply Voltage | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| I/O Voltage (VDDQ) | 1.35 V | β |
| Package | 96-ball FBGA | FBGA-96 |
| Number of Pins | 96 | 96 |
| Operating Temperature Range | -40Β°C to +95Β°C | β |
| Number of Banks | 8 | β |
| Burst Length | 8 (with burst chop 4) | [DATA_NEEDED: Burst Length] |
| CAS Latency | Programmable (e.g., 13, 12, 11) | [DATA_NEEDED: CAS Latency] |
| On-Die Termination (ODT) | Yes | β |
| Auto Precharge | Yes | β |
| Self-Refresh | Yes | β |
| RoHS Status | Compliant | β |
| Density | β | 4 Gb |
| Organization | β | 256M x 16 |
| Clock Frequency | β | 933 MHz |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| RoHS | β | Compliant |