K4RAH086VB-BIWM vs H5CG48AGBDX018N Comparison
Detailed side-by-side comparison of K4RAH086VB-BIWM by Samsung Electronics and H5CG48AGBDX018N by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH086VB-BIWM | H5CG48AGBDX018N |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $87.42 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb (2G x 8) |
| Data Rate | 5600 Mbps per pin | 5600 Mbps |
| Organization | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| Supply Voltage | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Mounting Type | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | -40C to +85C |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Bus Width | — | 8 bit |
| Package | — | 82-ball FCBGA (JEDEC DDR5 78/82-ball) |
| Interface | — | JEDEC DDR5 |
| Memory Generation | — | DDR5 (SK hynix A-die) |
| Clock Frequency | — | up to 5600 MHz (data rate 5600 Mbps) |
| Application Class | — | Computing, industrial controllers, embedded logging |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |