K4RAH086VB-BIWM vs H5CG48AGBDX018N Vergleich
Detaillierter Direktvergleich von K4RAH086VB-BIWM von Samsung Electronics und H5CG48AGBDX018N von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH086VB-BIWM | H5CG48AGBDX018N |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,85 | $87,42 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb (2G x 8) |
| Datenrate | 5600 Mbps per pin | 5600 Mbps |
| Speicherorganisation | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| Versorgungsspannung | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Montageart | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Betriebstemperatur | [DATA_NEEDED: temperature range] | -40C to +85C |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Bus Width | — | 8 bit |
| Gehäuse | — | 82-ball FCBGA (JEDEC DDR5 78/82-ball) |
| Schnittstelle | — | JEDEC DDR5 |
| Memory Generation | — | DDR5 (SK hynix A-die) |
| Clock Frequency | — | up to 5600 MHz (data rate 5600 Mbps) |
| Application Class | — | Computing, industrial controllers, embedded logging |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |