K4RAH086VB-BIWM vs H5CG48AGBDX018N 对比
详细并排对比 K4RAH086VB-BIWM 出自 Samsung Electronics 和 H5CG48AGBDX018N 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH086VB-BIWM | H5CG48AGBDX018N |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.85 | $87.42 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb (2G x 8) |
| 数据速率 | 5600 Mbps per pin | 5600 Mbps |
| 存储组织 | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| 电源电压 | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| 安装类型 | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| 工作温度 | [DATA_NEEDED: temperature range] | -40C to +85C |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Bus Width | — | 8 bit |
| 封装 | — | 82-ball FCBGA (JEDEC DDR5 78/82-ball) |
| 接口 | — | JEDEC DDR5 |
| Memory Generation | — | DDR5 (SK hynix A-die) |
| Clock Frequency | — | up to 5600 MHz (data rate 5600 Mbps) |
| Application Class | — | Computing, industrial controllers, embedded logging |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |