K6X1008C2D-TF55 vs K6F3216U6M-EF70T Comparison
Detailed side-by-side comparison of K6X1008C2D-TF55 by Samsung Electronics and K6F3216U6M-EF70T by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ End of Life
Specification Comparison
| Parameter | K6X1008C2D-TF55 | K6F3216U6M-EF70T |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.35 | $6.10 |
| Memory Type | SRAM - Asynchronous | SRAM - Asynchronous |
| Memory Size | 1 Mbit | 32 Mbit |
| Organization | 128K x 8 | 2M x 16 |
| Access Time (tAA) | 55 ns | — |
| Interface | Parallel | Parallel |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | Full CMOS Static RAM |
| Package | 32-TSOP REVERSE | 55-TFBGA (7.5 x 12 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| RoHS Status | RoHS: Yes (per distributor listing) | NO (per third-party listing) |
| Supply Voltage | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |
| Refresh Requirement | — | None (static memory) |