K6X1008C2D-TF55 vs K6F3216U6M-EF70T 对比
详细并排对比 K6X1008C2D-TF55 出自 Samsung Electronics 和 K6F3216U6M-EF70T 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K6X1008C2D-TF55 | K6F3216U6M-EF70T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 停产 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.35 | $6.10 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 1 Mbit | 32 Mbit |
| 存储组织 | 128K x 8 | 2M x 16 |
| Access Time (tAA) | 55 ns | — |
| 接口 | Parallel | Parallel |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | Full CMOS Static RAM |
| 封装 | 32-TSOP REVERSE | 55-TFBGA (7.5 x 12 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| RoHS 状态 | RoHS: Yes (per distributor listing) | NO (per third-party listing) |
| 电源电压 | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |
| Refresh Requirement | — | None (static memory) |