MMBT3904LT1 vs MMBT3904 Comparison

Detailed side-by-side comparison of MMBT3904LT1 by onsemi and MMBT3904 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter MMBT3904LT1 MMBT3904
Brand onsemi onsemi
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.04 $0.04
Polarity NPN —
Collector-Emitter Voltage (Vceo) 40 V 40 V
Collector-Base Voltage (Vcbo) 60 V 60 V
Emitter-Base Voltage (Vebo) 6 V 6 V
Continuous Collector Current (IC) 200 mA 200 mA
Power Dissipation (PD) 200 mW (on minimum recommended pad) 200 mW to 350 mW (board-dependent)
DC Current Gain (hFE) 100 to 300 100 to 300 (at IC=10 mA, VCE=1.0 V)
Transition Frequency (ft) 300 MHz (min) 300 MHz (typ, at VCE=20 V, IC=10 mA)
Collector-Emitter Saturation Voltage (Vce(sat)) [DATA_NEEDED: exact VCE(sat) value at rated IC] —
Noise Figure 5 dB (max) 5 dB (max)
Operating Junction Temperature -55 °C to +150 °C —
Package SOT-23 (TO-236), 3-pin SOT-23 (TO-236AB), 3 pins
Mounting Type Surface Mount Surface Mount
Die Construction Epitaxial Planar —
Complementary PNP Part MMBT3906 MMBT3906
RoHS Status Compliant (Lead Free version available) —
AEC-Q101 Qualified Yes (S-prefix variant) —
Transistor Type — NPN
Operating Temperature Range — -55C to +150C (junction)
Lead-Free / RoHS — Yes (fully RoHS compliant per datasheet)
Automotive Grade (AEC-Q101) — Qualified by selected suppliers

Datasheets & Resources

Browse All Products Create BOM Request Quote