MT40A1G8SA-062E vs H5AN8G8NDJR Comparison
Detailed side-by-side comparison of MT40A1G8SA-062E by Micron Technology and H5AN8G8NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A1G8SA-062E
MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A1G8SA-062E β ActiveSpecification Comparison
| Parameter | MT40A1G8SA-062E | H5AN8G8NDJR |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.05 | $24.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s (DDR4-3200) | 3200 MT/s |
| Clock Frequency | 1.6 GHz | β |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | β |
| Row Access Time | 19 ns | β |
| VDD / VDDQ | 1.2 V +/-60 mV | β |
| VPP | 2.5 V, -125 mV, +250 mV | 2.5 V |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | β |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | β |
| Operating Temperature | 0C to +95C (CT range; IT: -40C to +95C) | 0Β°C to +95Β°C (Tc) |
| I/O Type | 1.2 V pseudo open-drain | β |
| Burst Length | BL8, BC4 (burst chop) | 8 and 4 (with burst chop) |
| Package | 78-ball FBGA (7.5 x 11 mm) | FBGA-78 (7.5x11 mm) |
| Mounting Type | Surface Mount | β |
| Features | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | β |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| VDDQ | β | 1.2 V |
| CAS Latency | β | 22 (typical) |
| tRCD | β | 22 ns |
| tRP | β | 22 ns |
| Self-Refresh Current | β | 30 mA (typical) |
| Active Standby Current | β | 60 mA (typical) |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |