MT40A1G8SA-062E vs H5AN8G8NDJR Perbandingan
Perbandingan bersamaan detil MT40A1G8SA-062E dari Micron Technology dan H5AN8G8NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A1G8SA-062E | H5AN8G8NDJR |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 3200 MT/s (DDR4-3200) | 3200 MT/s |
| Clock Frequency | 1.6 GHz | — |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | — |
| Row Access Time | 19 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV, +250 mV | 2.5 V |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | — |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | — |
| Suhu Kerja | 0C to +95C (CT range; IT: -40C to +95C) | 0°C to +95°C (Tc) |
| I/O Type | 1.2 V pseudo open-drain | — |
| Burst Length | BL8, BC4 (burst chop) | 8 and 4 (with burst chop) |
| Paket | 78-ball FBGA (7.5 x 11 mm) | FBGA-78 (7.5x11 mm) |
| Tipe Mounting | Surface Mount | — |
| Fitur | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | — |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| Latensi CAS | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |