MT40A1G8WE-075E vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of MT40A1G8WE-075E by Micron Technology and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A1G8WE-075E
MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8WE-075E β ActiveSpecification Comparison
| Parameter | MT40A1G8WE-075E | H5AN8G6NDJR |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.90 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (1G x 8) | β |
| Data Rate | 2666 MT/s (1.33 GHz) | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Supply | 2.5V (-125mV, +250mV) | β |
| Operating Temperature (TC) | -40Β°C to +105Β°C (industrial) | β |
| Refresh Time (8192 cycles) | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C | β |
| Package | 78-ball FBGA (8x12mm) | 96-ball FBGA (13mm x 7.5mm) |
| Mounting Type | Surface Mount | β |
| I/O Type | 1.2V pseudo-open-drain | β |
| VREFDQ | On-die, internal, adjustable | β |
| Burst Length | 8 and 4 | 8 (BL8), 4 (BC4) |
| CAS Latency | Programmable | 22 cycles (at 3200 Mbps) |
| RoHS Status | Compliant | β |
| AEC-Q100 | Optional (AIT variant) | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage | β | 1.2 V |
| Number of Terminals | β | 96 |
| Maximum Supply Voltage (Vsup) | β | 1.26 V |
| Maximum Operating Temperature | β | 85 Β°C |
| Access Mode | β | Multi Bank Page Burst |
| JESD-30 Code | β | R-PBGA-B96 |
| RoHS | β | Compliant |
| Features | β | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |