MT40A1G8WE-075E vs H5AN8G6NDJR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A1G8WE-075E sa pamamagitan ng Micron Technology at H5AN8G6NDJR sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MT40A1G8WE-075E | H5AN8G6NDJR |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit (1G x 8) | — |
| Rate ng Data | 2666 MT/s (1.33 GHz) | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Operating Temperature (TC) | -40°C to +105°C (industrial) | — |
| Refresh Time (8192 cycles) | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Packhaging | 78-ball FBGA (8x12mm) | 96-ball FBGA (13mm x 7.5mm) |
| Uri ng Pagpapasok | Surface Mount | — |
| I/O Type | 1.2V pseudo-open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| Burst Length | 8 and 4 | 8 (BL8), 4 (BC4) |
| Latensya ng CAS | Programmable | 22 cycles (at 3200 Mbps) |
| Tindminan RoHS | Compliant | — |
| AEC-Q100 | Optional (AIT variant) | — |
| Density | — | 8 Gb |
| Organisasyon | — | 512M x 16 |
| Volte ng Pagbibigay | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |