MT40A1G8WE-075E vs H5AN8G6NDJR Perbandingan
Perbandingan bersamaan detil MT40A1G8WE-075E dari Micron Technology dan H5AN8G6NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A1G8WE-075E | H5AN8G6NDJR |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit (1G x 8) | — |
| Laju Data | 2666 MT/s (1.33 GHz) | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Operating Temperature (TC) | -40°C to +105°C (industrial) | — |
| Refresh Time (8192 cycles) | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Paket | 78-ball FBGA (8x12mm) | 96-ball FBGA (13mm x 7.5mm) |
| Tipe Mounting | Surface Mount | — |
| I/O Type | 1.2V pseudo-open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| Burst Length | 8 and 4 | 8 (BL8), 4 (BC4) |
| Latensi CAS | Programmable | 22 cycles (at 3200 Mbps) |
| Status RoHS | Compliant | — |
| AEC-Q100 | Optional (AIT variant) | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Tegangan Pemuat | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |