MT40A256M16GE-083E vs H5AN4G6NBJR-UHC Comparison
Detailed side-by-side comparison of MT40A256M16GE-083E by Micron Technology and H5AN4G6NBJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ End of LifeSpecification Comparison
| Parameter | MT40A256M16GE-083E | H5AN4G6NBJR-UHC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $8.09 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1.6 GHz |
| Supply Voltage | 1.2 V | — |
| Package | 96-ball FBGA, 9 x 14 mm | FBGA-96 (PBGA-96) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | — |
| Technology | CMOS DRAM | CMOS |
| ECCN | EAR99 | — |
| Country of Origin | China | — |
| Halogen Free | Compliant | — |
| Lead Free | Yes | — |
| Introduction Date | August 2017 | — |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| CAS Latency | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| Memory Size | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |
| RoHS Status | — | Compliant |