MT40A256M16GE-083E vs H5AN4G6NBJR-UHC 对比
详细并排对比 MT40A256M16GE-083E 出自 Micron Technology 和 H5AN4G6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停产规格对比
| 参数 | MT40A256M16GE-083E | H5AN4G6NBJR-UHC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 停产 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.20 | $8.09 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1.6 GHz |
| 电源电压 | 1.2 V | — |
| 封装 | 96-ball FBGA, 9 x 14 mm | FBGA-96 (PBGA-96) |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel | — |
| Technology | CMOS DRAM | CMOS |
| ECCN | EAR99 | — |
| Country of Origin | China | — |
| 无卤 | Compliant | — |
| Lead Free | Yes | — |
| Introduction Date | August 2017 | — |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| CAS 延迟 | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| 存储容量 | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |
| RoHS 状态 | — | Compliant |