MT40A512M16JY-083E vs K4A8G165WG-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16JY-083E by Micron Technology and K4A8G165WG-BCWE by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ ActiveSamsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ ActiveSpecification Comparison
| Parameter | MT40A512M16JY-083E | K4A8G165WG-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electro-Mechanics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.85 | $29.53 |
| Memory Type | DDR4 SDRAM (Automotive) | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Organization | 512M x 16 | — |
| Clock Frequency | 1.2 GHz (tCK = 0.83 ns) | — |
| Data Rate | 2400 MT/s (speed grade -083E) | 3200 Mbps |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| I/O Interface | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal adjustable generation | — |
| Refresh Structure | 8192-cycle refresh | — |
| Refresh Window | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C | — |
| Package | 96-FBGA (8 x 14 mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| ECCN | EAR99 | — |
| Halogen Free | Compliant | — |
| Country of Origin | China | — |
| Memory Size | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Supply Voltage | — | 1.2 V |
| Operating Temperature Range | — | 0°C to +85°C |
| Operating Current | — | 20 mA |
| Memory Interface | — | Parallel |
| Row Cycle Time (tRC) | — | 19 ns |
| Technology | — | B-die |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Lifecycle Status | — | Active |