MT40A512M16JY-083E vs K4A8G165WG-BCWE 对比
详细并排对比 MT40A512M16JY-083E 出自 Micron Technology 和 K4A8G165WG-BCWE 出自 Samsung Electro-Mechanics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ 量产中Samsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ 量产中规格对比
| 参数 | MT40A512M16JY-083E | K4A8G165WG-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electro-Mechanics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.85 | $29.53 |
| 存储器类型 | DDR4 SDRAM (Automotive) | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 512M x 16 | — |
| Clock Frequency | 1.2 GHz (tCK = 0.83 ns) | — |
| 数据速率 | 2400 MT/s (speed grade -083E) | 3200 Mbps |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| I/O Interface | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal adjustable generation | — |
| Refresh Structure | 8192-cycle refresh | — |
| Refresh Window | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C | — |
| 封装 | 96-FBGA (8 x 14 mm) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| ECCN | EAR99 | — |
| 无卤 | Compliant | — |
| Country of Origin | China | — |
| 存储容量 | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| 电源电压 | — | 1.2 V |
| 工作温度范围 | — | 0°C to +85°C |
| Operating Current | — | 20 mA |
| Memory Interface | — | Parallel |
| Row Cycle Time (tRC) | — | 19 ns |
| Technology | — | B-die |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| 生命周期状态 | — | Active |