MT40A512M16TB-062E vs NT5AD512M16B4-HR Comparison

Detailed side-by-side comparison of MT40A512M16TB-062E by Micron Technology and NT5AD512M16B4-HR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TB-062E MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16TB-062E ✓ Active
Nanya Technology
NT5AD512M16B4-HR NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya

NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya

NT5AD512M16B4-HR ✓ Active

Specification Comparison

Parameter MT40A512M16TB-062E NT5AD512M16B4-HR
Brand Micron Technology Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $60.00 $43.10
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit —
Organization 512M x 16 512M x 16
Data Rate 1600 MHz (DDR4-3200) 3200 Mbps
Supply Voltage - VDD/VDDQ 1.2V ±60mV —
Supply Voltage - VPP 2.5V, -125mV, +250mV —
tRCD 19 ns —
Refresh Time 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C —
Operating Temperature Range 0°C to +95°C (standard), -40°C to +95°C (IT) —
Package 96-FBGA (7.5x13 mm) 96-ball TFBGA
Mounting Type Surface Mount —
Interface Parallel —
Features Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration —
RoHS Status Compliant —
REACH Status Compliant —
Density — 8Gb
Supply Voltage — 1.2V
Temperature Range — 0°C to +95°C
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask — Yes
Write Leveling — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
CRC Function — Yes
RoHS — Compliant

Datasheets & Resources

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