MT40A512M16TB-062E vs NT5AD512M16B4-HR 对比
详细并排对比 MT40A512M16TB-062E 出自 Micron Technology 和 NT5AD512M16B4-HR 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M16TB-062E | NT5AD512M16B4-HR |
|---|---|---|
| 品牌 | Micron Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $60.00 | $43.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 1600 MHz (DDR4-3200) | 3200 Mbps |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV | — |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV | — |
| tRCD | 19 ns | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| 工作温度范围 | 0°C to +95°C (standard), -40°C to +95°C (IT) | — |
| 封装 | 96-FBGA (7.5x13 mm) | 96-ball TFBGA |
| 安装类型 | Surface Mount | — |
| 接口 | Parallel | — |
| 特性 | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS 状态 | Compliant | — |
| REACH Status | Compliant | — |
| Density | — | 8Gb |
| 电源电压 | — | 1.2V |
| Temperature Range | — | 0°C to +95°C |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |