MT41K256M16HA-107:E vs K4B4G1646D-BFMA Comparison
Detailed side-by-side comparison of MT41K256M16HA-107:E by Micron Technology and K4B4G1646D-BFMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16HA-107:E - 4Gbit DDR3L SDRAM 933MHz | Micron
MT41K256M16HA-107:E ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16HA-107:E | K4B4G1646D-BFMA |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.00 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Memory Size | 4Gbit (256M x 16) | — |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35V | 1.5V |
| Package | 96-FBGA (9x14 mm) | 96-ball FBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0°C to 95°C (Tc) | — |
| Interface | Parallel | — |
| Data Rate | 1866 MT/s | 1866 Mbps |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Number of Pins | 96 | — |
| Organization | 256M x 16 | 256M x 16 |
| CAS Latency | 13 (typical) | Programmable |
| Density | — | 4Gb |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| On-Die Termination | — | Yes |
| Temperature Range | — | 0°C to 95°C (case) |
| RoHS | — | Compliant |
| Halogen Free | — | Yes |