MT41K256M16HA-107:E vs K4B4G1646D-BFMA 对比
详细并排对比 MT41K256M16HA-107:E 出自 Micron Technology 和 K4B4G1646D-BFMA 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT41K256M16HA-107:E | K4B4G1646D-BFMA |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.00 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3 SDRAM |
| 存储容量 | 4Gbit (256M x 16) | — |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| 电源电压 | 1.35V | 1.5V |
| 封装 | 96-FBGA (9x14 mm) | 96-ball FBGA |
| 安装类型 | Surface Mount | — |
| 工作温度 | 0°C to 95°C (Tc) | — |
| 接口 | Parallel | — |
| 数据速率 | 1866 MT/s | 1866 Mbps |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | Yes |
| 引脚数 | 96 | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| CAS 延迟 | 13 (typical) | Programmable |
| Density | — | 4Gb |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| On-Die Termination | — | Yes |
| Temperature Range | — | 0°C to 95°C (case) |
| RoHS | — | Compliant |
| 无卤 | — | Yes |