NT5AD512M16A4-HR vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of NT5AD512M16A4-HR by Nanya Technology and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16A4-HR
NT5AD512M16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | Nanya
NT5AD512M16A4-HR β ActiveSK hynix
H5AN8G6NCJR-VKC
H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-VKC β ActiveSpecification Comparison
| Parameter | NT5AD512M16A4-HR | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gb | 8 Gb |
| Supply Voltage | 1.2 V | β |
| Data Rate | 3200 Mbps (PC4-25600) | 2666 Mbps |
| Operating Temperature | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| Package | TFBGA-96 | FBGA-96 |
| Mounting Type | Surface Mount | β |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| ZQ Calibration | Yes | β |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| Operating Current (IDD2N) | β | 28 mA |
| Operating Current (IDD4R) | β | 45 mA |
| Burst Length | β | 8 (BC4) |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Row Address Bits | β | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | β | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS | β | Compliant |