NT5AD512M16A4-HR vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of NT5AD512M16A4-HR by Nanya Technology and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5AD512M16A4-HR | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | — |
| Density | 8 Gb | — |
| Supply Voltage | 1.2 V | — |
| Data Rate | 3200 Mbps (PC4-25600) | 2666 Mbps (MT/s) |
| Operating Temperature | 0°C to +95°C | 0C to +95C |
| Package | TFBGA-96 | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Memory Size | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Interface | — | Parallel |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| RoHS Status | — | Compliant |
| Lifecycle Status | — | Active |