NT5AD512M16A4-HR vs H5AN8G6NCJR-VKC Perbandingan
Perbandingan bersamaan detil NT5AD512M16A4-HR dari Nanya Technology dan H5AN8G6NCJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | NT5AD512M16A4-HR | H5AN8G6NCJR-VKC |
|---|---|---|
| Merek | Nanya Technology | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Organisasi | 512M x 16 | — |
| Density | 8 Gb | — |
| Tegangan Pemuat | 1.2 V | — |
| Laju Data | 3200 Mbps (PC4-25600) | 2666 Mbps (MT/s) |
| Suhu Kerja | 0°C to +95°C | 0C to +95C |
| Paket | TFBGA-96 | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Ukuran Memori | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Antarmuka | — | Parallel |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| Status RoHS | — | Compliant |
| Status Lingkungan Hidup | — | Active |