NT5AD512M16C4-JRI vs AS4C512M16D4A-62BCNTR Comparison
Detailed side-by-side comparison of NT5AD512M16C4-JRI by Nanya Technology and AS4C512M16D4A-62BCNTR by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
NT5AD512M16C4-JRI ✓ ActiveAlliance Memory
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR ✓ ActiveSpecification Comparison
| Parameter | NT5AD512M16C4-JRI | AS4C512M16D4A-62BCNTR |
|---|---|---|
| Brand | Nanya Technology | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $75.58 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.14V ~ 1.26V (nominal 1.2V) |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | TFBGA-96 | 96-FBGA (7.5x13 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | Compliant |
| Memory Size | — | 8 Gbit (512M x 16) |
| Clock Rate | — | 1600 MHz (DDR4-3200) |
| CAS Latency | — | 18 ns |
| Operating Temperature | — | 0°C to +95°C (Commercial) |
| Interface | — | POD (Pseudo Open Drain) |
| Refresh | — | Auto-refresh and self-refresh |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Write Cycle Time - Word, Page | — | 15 ns |
| Standard Pack | — | 1500/reel (Tape & Reel) |