PDRQL8KCBF12-00 vs K4RAH086VB-BCWM Comparison
Detailed side-by-side comparison of PDRQL8KCBF12-00 by Samsung Electronics and K4RAH086VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ ActiveSpecification Comparison
| Parameter | PDRQL8KCBF12-00 | K4RAH086VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $18.00 | $44.55 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 7200 MT/s | 5600 Mbps |
| Supply Voltage | 1.1 V | 1.1 V |
| Package | FBGA | FBGA-82 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: Operating temperature range] | Commercial temperature range (per datasheet) |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | 32 (BL32, DDR5 standard) |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Interface | Pseudo-differential DQ | DDR5 (parallel) |
| Process Technology | 10nm-class | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Memory Size | — | 16 Gb |
| Technology | — | DRAM (volatile) |
| Speed Grade | — | BCWM |
| ECC | — | On-die ECC |
| Lifecycle Status | — | Active |
| Sub-channel Architecture | — | Dual independent 32-bit sub-channels (per DDR5 spec) |